http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61287274-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 1985-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5c27be02d1133fdded0001692c8e504 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c9a632f771a75d0823e0c71c33497b2 |
| publicationDate | 1986-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S61287274-A |
| titleOfInvention | Manufacture of semicondutor memory device |
| abstract | PURPOSE:To prevent a memory retaining characteristic from deteriorating by forming an Si oxide film on an Si nitride film, and then forming the second Si nitride film by a vapor-phase growing method based on a plasma exciting reaction of Si compound and ammonia. CONSTITUTION:Source and drain regions 2, 3 are formed on an N-type Si substrate 1, an Si dioxide film 4 is formed, and a hole is then opened. Then, an extremely thin Si dioxide film 5 of a gate insulating film is formed in the hole. Thereafter, after the first Si nitride film 6 is formed on the film 5, the film 6 is thermally oxidized to form an Si dioxide film 7. Subsequently, after a contacting hole is formed, a gate electrode 8 is formed. Thereafter, a plasma Si nitride film 9 is formed by a plasma vapor-phase growing method of silane gas and ammonia gas. Then, a protective film 10 is formed to manufacture a P-channel aluminum gate MONOS type semiconductor memory device. A semiconductor memory device of excellent memory retaining characteristic with less memory characteristic deterioration can be obtained by the above manufacturing method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6442866-A |
| priorityDate | 1985-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.