http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61260238-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 1985-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1669feac2601717e899f573554533325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef9e421a422f6d3de1bce06564ae5296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dd50a6857f89cbb670affae240d62a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a54efae1c115dfe927482f2de97b2f7c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6fd51314a114ee8c9dcec29c50007db |
| publicationDate | 1986-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S61260238-A |
| titleOfInvention | Photosensitive composition |
| abstract | PURPOSE:To prevent effect of light reflected from a support and swelling of a photohardened product due to a developing soln., and to enhance resolution, dry etching and heat resistances by incorporating a polymer soluble in an aq. alkaline soln., a siloxane ladder polymer, and an aromatic azido compound. CONSTITUTION:The photosensitive compsn. contains a polymer soluble in an aq. alkaline soln., such as a novolak resin, a hydroxystyrene polymer, or poly(meth)acrylic acid, in the form of a homocondensate, cocondensate, homopolymer, or copolymer; a siloxane ladder polymer; and an aromatic azido compound, thus permitting the obtained photosensitive compsn. to be unaffected by the light reflected from the support, to be formed into a rectangular micropattern because this photohardened product is not swelled with a developing soln., and to be subjected to dry etching treatment after formation of the pattern, without trouble, such as exhaustion of a resist before completion of perfect etching of the layer to be treated, or thinning of pattern width, and to resist heat treatment even >=150 deg.C. |
| priorityDate | 1985-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.