http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61259534-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 1985-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c296f249fe51dd4f5cb0f595afede795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15cb4f02522b449da4455ef8ab8b0c41 |
| publicationDate | 1986-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S61259534-A |
| titleOfInvention | Screening method for semiconductor device |
| abstract | PURPOSE:To enable the elimination of the damage of a semiconductor device having no defect and to apply to the semiconductor device having a constant-voltage circuit by applying a high frequency voltage. CONSTITUTION:An insulating film 2 of the first layer is formed on a semiconductor substrate 1, a conductor 3 of the first layer such as aluminum is formed on the film 2, an interlayer insulating layer 4 of the insulating film of the second layer is formed on the conductor 3, and a conductor 5 of the second layer is further formed. In this process, a defect 6 occurs at the time of forming the film 2 and the conductor 3. When a high frequency voltage is applied between the conductor 3 of the first layer and the conductor 5 of the second layer, power is consumed by the layer 4 of a dielectric unit concentrically at the defect which is reduced in the thickness of the insulating film. Even if a semiconductor controller which contains a constant-voltage circuit in a power source is provided, the voltage is affected to the defect of the insulating film in the device. Therefore, it is not necessary to apply a high voltage to the semiconductor device, and even if the semiconductor device contains a constant-voltage circuit in the power source, a stress can be concentrically applied to the defect 6 of the film 4 to shortcicuit it in a short time, thereby picking up the semiconductor device having an internal defect. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6246073-B1 |
| priorityDate | 1985-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268 |
Total number of triples: 18.