http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61253479-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 1985-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_129edb6001cd496530bac3874f6e0995
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba0ddd1e5b045d1179c62810474e34cb
publicationDate 1986-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S61253479-A
titleOfInvention Selection of semiconductor device
abstract PURPOSE: To select a device with a provable deterioration by radiation, by measuring changes in the current amplification factor at a fine current area of a silicon bipolar transistor within a semiconductor device or characteristic standard of the device determined by the changes in the current amplification. n CONSTITUTION: Some semiconductors made up of a silicon bipolar transistor or the like may be deteriorated by radiation in the use under a radiation environment. In the low dose irradiation, the current amplification factor at a small current area of the bipolar transistor changes greater than that at a large current area. So changes in the current amplification factor at the fine current area of the bipolar transistor or changes in the characteristic standard of the semiconductor device based on the changes in the current amplification factor are measured. This enables the selection and removal of the semiconductor with a provable deterioration by radiation from the measured data. n COPYRIGHT: (C)1986,JPO&Japio
priorityDate 1985-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 13.