| abstract |
PURPOSE: To permit complete removal of ions by irradiating waste water contg. heavy metal ions with light in the presence of catalyst contg. a semiconductor as primary component and depositing the heavey metal ions in the waste water on the catalyst. n CONSTITUTION: Powdery semiconductor comprising TiO 2 , strontium titanate, barium titanate, etc. is added to waste water contg. heavy metal ions, and the waste water is irradiated with light emitted from a superhigh pressure mercury lamp, halogen lamp, xenon lamp, etc. as light source. Thus, heavy metal ions are deposited on the surface of the semiconductor. Suitable wavelength of the irradiating light is 350W420nm. n COPYRIGHT: (C)1986,JPO&Japio |