| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
1985-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39015748f989933c6cccb85b1d24ec56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fedb3cbf30d5aebcb13e8a47fc136ca0 |
| publicationDate |
1986-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S61168253-A |
| titleOfInvention |
High withstand voltage mos field effect semiconductor device |
| abstract |
PURPOSE:To prevent an erroneous operation in a semiconductor device formed with two MOSFET's of different withstand voltages on the same semiconductor substrate by completely coating a low withstand voltage semiconductor region with semiconductor. CONSTITUTION:In a semiconductor device formed with a high withstand voltage MOSFETB and a low withstand voltage MOSFETC for driving the FETB on the same semiconductor substrate, the pattern of the low withstand voltage FET is completely coated wit aluminum or other semiconductor D. With the thus constructed structure, erroneous operation due to the inversion of the field of the low withstand voltage FET by the influence of the high withstand voltage FET can be prevented. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6617652-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4667756-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0325970-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6989566-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007134728-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6750506-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005251903-A |
| priorityDate |
1985-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |