http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61139667-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e4876823722cd76fe9a10632e6285d4
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
filingDate 1984-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_941074b6d55162f4ea5557b4d8c9fcba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53ef8ba769607765dd0a9ac58f8fa97d
publicationDate 1986-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S61139667-A
titleOfInvention Formation of thin silicon carbide film
abstract PURPOSE: To form a thin film at a high speed on a base material by supplying a carrier gas and org. silicon into a reaction furnace, heating the base material, activating a reactive gas by a laser beam and forming the thin silicon carbide film with glow discharge by a CVD method. n CONSTITUTION: The graphite base material 2 is put into the reaction furnace 1 and the inside of the furnace is evacuated by an evacuating and recovering device 30. A gaseous mixture composed of dimethyl dichlorosilane and carbon tetrachloride and the carrier gas are supplied to the furnace. The material 2 is heated by an electrode 3 for heating and the glos discharge is executed between an annular electrode 5 and the material 2 by a power sourrce 4 for glow discharge to generate gaseous plasma and to active the reactive gas. A laser beam is generated by a laser device 6 and is irradiated through a lens 7 and a window 8 to a space 9. Part thereof is reflected by a reflecting mirror 11 though a window 8' and the thin silicon carbide film is formed on the material 2 by the CVD method. The thin film is thus formed at about 5μ/min average speed. n COPYRIGHT: (C)1986,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103540936-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107012446-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115466939-A
priorityDate 1984-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.