| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| filingDate |
1984-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bd1dc4fe1e245d1278a4e5071bab5c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ffb01f6a700b0c9cfc9e371f4a5e2ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7ca76b92b5c0f45282b962abe8b4b22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_697313337c441fafb4a01dfdc1d017e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97c782d0966a8dd8fc1d9f58797b3e74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a93eb83116042ced5bf2eff4554c450
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_092a0a5e4ca5b0eccbfcdbaa473ac582 |
| publicationDate |
1986-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S6110233-A |
| titleOfInvention |
Manufacture of semiconductor device |
| abstract |
PURPOSE:To reduce the delay of a signal and the heat generation in an electrode wiring of a semiconductor device, by decreasing the resistance of a contact within a contact window provided in an insulation layer. CONSTITUTION:An insulation layer 2 on a semiconductor substrate 1 is selectively etched to form a contact window so that the surface of the substrate 1 is exposed in this window. The contact window is then filled with silicon 3 by a conventionalmethod so as to form approximately flat surface between the portion filled with silicon 3 and the insulation layer. The semiconductor substrate 1 having the portion filled with silicon 3 is received in a CVD unit for heating it to 300-350 deg.C while tungsten hexafluoride gas is supplied into the CVD unit together with a carrier gas, so that the silicon in the portion 3 is substituted with tungsten. A wiring 5 of metal such as aluminium or the like is provided on the portion filled with tungsten 4 and the insulation layer 2 so as to complete an electrode wiring. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01218018-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61140133-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6421942-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02151060-A |
| priorityDate |
1984-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |