http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6059347-A

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filingDate 1983-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a64f7525e0e61a09efb0e6ebaa0e6849
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publicationDate 1985-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S6059347-A
titleOfInvention Manufacture of resist material
abstract PURPOSE:To attain 100% chloromethylation rate by hydrolyzing chloromethylphenyltrichlorosilane. CONSTITUTION:Chloromethylated phenyltrichlorosilane represented by formula I in which n is a positive integer is synthesized by hydrolyzing chloromethylphenyltrichlorosilane and polymerizing it through dehydration. A resist high in sensitivity can be obtained by substituting groups sensitive to high-energy rays, such as -CH2OCO-CH=CHC6H5, -CH2OCO-CH=CH2, -CH2Br, or the like for a part of -CH2Cl groups or all of them to an amt. of high-energy groups introduced.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4634834-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006257321-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5011901-A
priorityDate 1983-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.