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filingDate 1984-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05132447c2bb74c1219ea9d939095067
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publicationDate 1985-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S60262150-A
titleOfInvention Intermediate layer for 3-layer resist material and method for using it
abstract PURPOSE: To obtain an organopolysiloxane material unchangeable against the lapse of time, soluble in org. solvents, and high in heat softening point by forming the intermediate layer of a 3-layer resist with organopolysiloxane represented by a specified general formula. n CONSTITUTION: The intermediate layer formed on the lower resist layer made of an org. polymer formed on a substrate is made of an organopolysiloxane represented by the formula in which R is a hydrocarbon, H, OH, or alkoxy group, and m+n+p+q=1, and m>0, n,p,q≥0, m/q≤1, and m/p≤0.3. The upper resist layer made of a polymer bridgeable or decomposable with radiation is laminated on it, and a prescribed pattern is formed on the upper layer. Then, the intermediate layer is etched with an org. solvent, and further, the lower layer is etched in succession to form the 3-layer resist pattern. n COPYRIGHT: (C)1985,JPO&Japio
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