http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60245233-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 1984-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91756eb19d706fa167421015acae4932 |
| publicationDate | 1985-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S60245233-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To increase sufficiently treating ability and to form uniformly a titanium nitride film with uniform quality over a semiconductor substrate surface, by employing titanium tetrachloride and ammonia as principal raw materials. CONSTITUTION:Into the reacting chamber 12 in which a reacting gas introducing conduit 11 in T-shape is mounted at the central section, vapor of titanium tetrachloride and ammonia gas and nitrogen gas as a carrier gas, being mixed, are introduced through the conduit 11. In the reacting chamber 12 which is kept at a pressure of about 0.3-0.5Torr by exhausting means 15 and at a temperature of 500-650 deg.C, a titanium nitride film is deposited over each of surfaces of semiconductor substrates 14. In this way, by employing liquid titanium tetrachloride with a sufficiently high vapor pressure and ammonia gas as principal materials, the reduced pressure vapor phase epitaxy apparatus which has been employed usually and previously, can be utilized to form a titanium nitride film, so that sufficiently many substrates can be treated. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5300321-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1641031-A3 |
| priorityDate | 1984-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.