http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60220340-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
filingDate 1984-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79ebc0fef51bb7f36c0da5b147b3564e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd173c2622ddc24c10f347e5ed9d9710
publicationDate 1985-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S60220340-A
titleOfInvention Photosensitive resin composition and formation of pattern
abstract PURPOSE:To obtain a negative type resist capable of undergoing dry treatment of a substrate and microfabrication with high resolution and high precision by incorporating a silicon-contg. resin having aromatic rings each having specified substituents on a part or the whole part of the ring, in a photosensitive resin compsn. CONSTITUTION:The silicon-contg. resin may be either of a polysiloxane or polysilane resin, and a polymer of phenylmethylsiloxane, etc., are used for an aromatic polysiloxane resin, and polydiphenylsilane, etc., are used for the polysilane resin. These resing having -CH2N3 group are used alone or together with a a sensitizer, such as aromatic ketones, and a cross-linking agent, such as divinyl compds., etc., as a photosensitive resin. Said sensitizer is used generally in an amt. of 3-20wt% of the silicon-contg. resin, and said cross-linking agent is used 5-25wt% of said resin. They are dissolved in a solvent, applied to the substrate, exposed, and developed to form a pattern. This pattern is used as a mask for treating the substrate to be microprocessed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11062986-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01138554-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11774233-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11078112-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11554984-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63183437-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114309-B2
priorityDate 1984-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7845
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419547008

Total number of triples: 29.