http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60193333-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1984-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_985a9b1b632c6060eed4442691a02d92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68866aa474d4c5e5bbc344ef099a7eb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8177e79178ff3272afe955adef9094f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d953921bd8d20c449ee6d9f1117b06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aec2b18b2087577ebced1166462de8f |
| publicationDate | 1985-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S60193333-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To easily obtain an electrode having a small thickness when forming a two-layer wiring electrode on the surface of an Si substrate, by providing, in a layered manner, a polycrystalline Si film having a predetermined shape and containing a low-density impurity and a metallic film having a high melting point and containing an impurity, and heat treating them to cause uniform planer reaction on the interface thereof. CONSTITUTION:An extremely thin gate oxide film 2 is produced on the surface of an Si substrate 1 by heat treatment. A polycrystalline Si film 3 containing little impurity and a W silicide film 4 containing a high-density impurity are layered and deposited on the film 2. Unrequired portions of the films 4 and 3 are removed by gas plasma with the use of CCl4 or the like, so that a gate electrode having a desired shape and consisting of the films 3 and 4 is left. The structure is then subjected to heat treatment in N2 gas to reduce the resistance of the film 4 and to diffuse the impurity in the film 4 into the film 3 to reduce the electrode resistance. The whole surface is then covered with an SiO2 film 5 and an aperture is provided. An Al electrode 6 is fixed on the film 4 exposed by providing the aperture. In such a manner, a thin electrode is obtained without decreasing the dielectric strength. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5691235-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01120863-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6472323-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0277122-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6730954-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5661081-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01292865-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6429086-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5734200-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62117368-A |
| priorityDate | 1984-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.