http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S601831-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1983-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0631c5492ffb0c1bfc2a7bc0fa0a9e28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eb1213468cf56e856810228de3036ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8adbde8e5c574485314e50056992349a |
| publicationDate | 1985-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S601831-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To use laser beams abundant in fine workability without lowering adhesive properties and forming a pin hole by removing the residue of a semiconductor film shaped in a removing process by laser beams through plasma etching. CONSTITUTION:Amorphous silicon group amophous semiconductor films 13 are applied so as to continuously coat transparent conductive films 12a, 12b... consisting of tin oxide, etc. divided at every photoelectric conversion region 11a, 11b... on one main surface of an insulating and light-transmitting substrate 10. Amorphous semiconductor films 13'... in adjacent space sections 14... are removed through the projection of laser beams, and separate amorphous semiconductor layer 13a, 13b... is divided and formed at every photoelectric conversion region 11a, 11b.... Residue 15 containing scattered substances such as the meltage of the amorphous semiconductor films 13' slightly remains and adheres in the adjacent space sections 14 at that time. For remove the residue 15, carbon tetrafluoride is introduced into a chamber, plasma is excited and plasma etching is executed, and the uppermost layer, an N type layer 13n, of the amorphous semiconductor films 13 under the state of exposure is also etched. |
| priorityDate | 1983-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.