abstract |
PURPOSE:To check corrosion of bonding wires, and to enhance reliability of a semiconductor device by a method wherein the bonding wire is formed of the main component of aluminum containing nickel of 0.03wt% or more. CONSTITUTION:A pellet 3 of silicon (Si), etc. is fitted according to gold-silicon eutectic, etc. to a tab 2 consisting of the 42 alloy or a copper alloy, for example, the bonding pads (the electrodes) of the pellet 3 thereof and the inner lead parts 4 (the outside conductive parts) of leads 1 consisting of the same material with the tab 2 are connected by wires 5, and a dual-in-line type plastic package construction sealed with resin 6 is formed. The wires 5 in the semiconductor device thereof is mainly consisting of aluminum, and nickel of 0.03wt% or more, desirably 0.075wt% or more is contained therein. |