| abstract |
PURPOSE: To obtain noncrystalline boron nitride having improved stability without damaging transparency, by synthesizing boron nitride by vapor-phase precipitation method, adding silicon nitride in a specific ratio to it. n CONSTITUTION: Noncrystalline boron nitride synthesized by vapor-phase precipitation method, containing 0.05W15wt% silicon nitride. When an amount of silicon nitride exceeds 15wt%, improved processing properties of boron nitride of its own is damaged and it is unfavorable. When an amount of boron nitride less than 0.05wt%, the desired purpose can not be attained. BCl 3 , B 2 H 6 , B 3 N 3 H 6 (borazine), etc. may be cited as the boron source compound used. N 2 , NH 3 , etc. may be cited as the nitrogen source compound. SiCl 4 , or SiH 4 are used as the silicon source compound. In the case of a liquid raw material, it is vaporized by bubbling method using a carrier gas such as H 2 , etc. n COPYRIGHT: (C)1985,JPO&Japio |