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filingDate 1984-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e064c425ce3c4842dc7497edef492c5f
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publicationDate 1985-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S60147147-A
titleOfInvention Lead frame for semiconductor device
abstract PURPOSE:To realize a highly reliable and economically superior lead frame made of Cu or a Cu alloy of high thermal conductivity for a semiconductor device by a method wherein an intermediate layer of a Cu-Zn or Cu-Sn alloy is sandwiched between a primary layer of Ni and an Ag layer. CONSTITUTION:Prior to the manufacture of a lead frame for a semiconductor device, a substrate 1 made of Sn-containing Cu with desired pattern punched through is subjected to degreasing and acid bath, whereafter the entire surface is coated by a primary Ni layer 2 formed by plating. A region 5 whereto a semiconductor element is fixed and internal lead terminal 6 positioned at the end of an external lead terminal 7 are coated by an approximately 0.1mum-thick Cu-Zn alloy layer 3 and then by an Ag layer 7 by plating, for the realization of a lead frame of a cross section of the specified construction. This method results in an inexpensive Cu-based lead frame with an excellent heat-dissipating capability without degrading affinity with a sealing resin and Ag coating.
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priorityDate 1984-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 44.