http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60143334-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0345001e918f6aed4484e790b33ddcb6
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filingDate 1983-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9636f56874024e53106c726205c62bf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17128fab109a509904cd2f2be8cf7cb7
publicationDate 1985-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S60143334-A
titleOfInvention Resist
abstract PURPOSE:To obtain an electron beam and X-ray resist prevented from disturbance occurring at the interface between adjacent two patterns exposed at two different times one after the lapse of time from the other, and high in sensitivity and resolution by using a resist composed essentially of polymethylsiloxane specified in the range of weight average mol.wt. CONSTITUTION:An objective electron beams and X-ray resist is composed essentially of polymethylsiloxane having a weight average mol.wt. of 350,000- 600,000. Disturbance due to expansion, etc., occurring at the interface between two adjacent resist patterns, the exposure time of one being after the lapse of time from that of the other, can be prevented. The electron beam sensitivity can be further enhanced by replacing <=0.1% of the methyl groups of the polymethylsiloxane molecular chain by vinyl groups. Sensitivity can be lowered and resolution can be enhanced by using polymethylsiloxane having >=500,000 weight average mol.wt. and replacing the methyl groups by phenyl groups.
priorityDate 1983-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.