http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60125840-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0345001e918f6aed4484e790b33ddcb6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-08 |
| filingDate | 1983-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9636f56874024e53106c726205c62bf2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_733fff75ccb0890dd157818ee0c26462 |
| publicationDate | 1985-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S60125840-A |
| titleOfInvention | Resist solution |
| abstract | PURPOSE:To prevent dissolution of an underneath resist and formation of a mixed layer and to simplify a lithographic process by using a satd. hydrocarbon for the solvent of a polysiloxane type resist used for a resist to senstitive to electron beam, X-rays, or UV rays. CONSTITUTION:A satd. hydrocarbon is used for the solvent of a polysiloxane (PSL) type resist to be used as the resist sensitive to electron beams, X-rays, or UV rays. Such a solvent is chain or cyclic satd. hydrocarbon having a boiling point of 120-170 deg.C, such as n-octane, various kinds of nonanes, various kinds of decanes, undecanes, and their mixtures. Even when the PSL type resist layer 8 is formed on a novolak resin resist layer 3 by using the PSL type resist soln. contg. such a solvent, the layer 3 is prevented from being dissolved and forming a mixed layer, thus not necessitating an operation, such as prebaking of the layer 3, and permitting simplification and speeding up of the lithographic process. Striation phenomenon does not occur and a thin uniform film can be formed. |
| priorityDate | 1983-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.