http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60123842-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
| filingDate | 1983-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16590a6efcc9869148ab0ceb775de621 |
| publicationDate | 1985-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S60123842-A |
| titleOfInvention | Production of photomask |
| abstract | PURPOSE:To manufacture a photomask without using a photoresist process by implanting selectively metallic ions into a metallic layer and changing the etching rate. CONSTITUTION:The metallic layer 2 of a transparent base plate 1 consisting of glass, etc. is subjected to ion implantation by irradiating selectively tungsten ion to said layer with an ion ray exposing device. If the ion kind and ion quantity to be implanted are adequately selected, the etching rate in the implanted part can be made considerably larger than the metallic part where the ion is not implanted in the next etching stage of the layer 2 by plasma. The etching rate by, for example, the gaseous plasma of carbon tetrachloride of the chromium oxide layer where the tungsten ion is not implanted is 200Angstrom /min and the part where the ion is implanted is unetchable. Only the pattern subjected to the ion implantation remains consequently when the dry etching is performed. The photomask is thus manufactered. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07327907-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6358446-A |
| priorityDate | 1983-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.