http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60108840-A

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filingDate 1983-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d16a51e7ae8ecda1ae7b8de343e691ba
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publicationDate 1985-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S60108840-A
titleOfInvention Photosensitive heat resistant material
abstract PURPOSE:To enable fine working with direct light and to simplify process by forming a titled material of specific organoladder polysiloxane and specific bis- azide compd. CONSTITUTION:A titled material is formed of the organoladder polysiloxane obtd. by bringing the organoladder polysiloxane expressed by the formula I and the unsatd. compd. expressed by the formula II into reaction in an org. solvent and the bis-azide compd. expressed by the formula N3-R4-N3. The organoladder polysiloxane and the unsatd. compd. are mixed at a rate of 1-3 alkoxy groups of the unsatd. compd. for one hydroxyl group of the organoladder polysiloxane. Such photosensitive heat resistant material is coated on a silicon water or the like and light or radiations are irradiated through a mask having a prescribed pattern thereto and when the material is developed by using a solvent of an arom. hydrocarbon or the like, the unexposed part is washed away and a relief pattern having a sharp end face is obtd. In the formulas, R1-R3 are lower alkyl groups such as a methyl group and a propyl group, X is hydrogen atom, a methyl group, etc., l is 1-3, m is 0-4, n is 2-100.
priorityDate 1983-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.