| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05556 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
1982-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebeb6a3b06c3c9f6ef9016638a9ea1c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9500fe13121d7562aa05191e7dc58e3 |
| publicationDate |
1984-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S5992537-A |
| titleOfInvention |
Semiconductor device |
| abstract |
PURPOSE:To produce a satisfactorily corrosion resistant electrode at low cost by a method wherein cheep copper etc. is utilized as the major material of a protecting film of an electrode metal and a precious metal film such as thin gold film etc. is formed on the protecting film. CONSTITUTION:An electrode 14 made of aluminum or aluminum alloy is formed on a silicon substrate 11 through the intermediary of a silicon oxide film 12. A titanium film 25 and a copper film 26 are formed on the surface of the electrode 14 by means of vacuum evaporation and sputtering process. Then a gold film 27 is further formed on the copper film 26. The electrode 14 formed in this way may prevent a crack due to bonding load from occurring since it is provided with soft aluminum layer and copper layer as lower layers. Besides the top layer made of precious metal hardly oxidized may be bonded with gold wire etc. easily. On the other hand, the aluminum layer coated with satisfactorily corrosion resistant metal may prevent it from being corroded. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1176640-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5783485-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4953003-A |
| priorityDate |
1982-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |