http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5957432-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1982-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfd49b49b2144c6bb810e2b78ac6dc41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb2c0b6a8b818916cb055419ec3967d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd26d9884f9cb36b6af161adb5a456cb |
| publicationDate | 1984-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5957432-A |
| titleOfInvention | Forming method for pattern |
| abstract | PURPOSE:To improve dry etching capability as excellent characteristics of a resist being left as they are maintained by irradiating radiation to a resist pattern obtained or exposing the resist pattern in a gas, which does not form a film, and exposing the resist pattern in the vapor of an organic compound. CONSTITUTION:A resist film is formed on a substrate, radiation is irradiated to the resist film, the desired resist pattern is formed on the substrate through development, radiation is irradiated to the resist pattern obtained or the resist pattern obtained is exposed to the gas, which does not form the film, and the resist pattern is exposed to the vapor of the organic compound. gamma-Rays, electron beams, X-rays, alpha-rays, neutron beams, ion beams, ultraviolet rays or far ultraviolet rays or the like are used as radiation, and rare gases, such as argon, helium, neon, etc., hydrogen, nitrogen, carbon tetrachloride, perfluoro-saturated hydrocarbon such as tetrafluorocarbon, ammonia or the like is used as the gas generating plasma. A compound with an aromatic ring and functional groups, such as styrene, chlorostyrene or the like is used as the organic compound to be employed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9656825-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04151668-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01123232-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9981820-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0442522-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02250006-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0187421-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6237932-A |
| priorityDate | 1982-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.