| abstract |
PURPOSE: To obtain an Al electronic material more excellent in corrosion resistance without lowering bondability, by containing a noble metal to Al as a main component in an amount corresponding to eutectic compsn. or less containing a primary crystal Al. n CONSTITUTION: This electronic material is based on Al and comprises an alloy containing a noble metal added to Al and is a material wherein the content of the noble metal corresponds to a eutetic compsn. having a primary crystal Al or less. When this material is used in a fine wire for connecting a wiring film comprising an Al vapor deposition film formed on a semiconductor element and an external lead wire, the bondability thereof is the same degree as Al. In addition, it can prevent the corrosion of the fine wire or the Al vapor deposition film in a semiconductor apparatus sealed by synthetic resin. In this case, when the content of the noble metal is used in an amount as mentioned above, it is finely crystallized as an eutectic crystal and a product having high plastic processability is obtained and high bondability in solid phase connection is further obtained. n COPYRIGHT: (C)1984,JPO&Japio |