http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59219974-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-10
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
filingDate 1983-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fa0f402038d8df4707a7851a3799236
publicationDate 1984-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S59219974-A
titleOfInvention Manufacture of semiconductor laser
abstract PURPOSE:To form a vertical resonator surface through etching by vertically etching an upper clad layer by using a specific etching liquid and sputteringetching an active layer and a lower clad layer. CONSTITUTION:An N type InP clad layer (a lower clad layer) 2, an InGaAsP active layer 3 and a P type InP clad layer (an upper clad layer) 4 are grown on an N type InP substrate 1. SiO2 7 is grown, opening sections are formed, and the clad layer 4 is etched by an etching liquid of HCl:H3PO4=1:4 to form etched sections 9, side surfaces thereof are vertical up to bottoms. SiO2 7 is removed, and the active layer 3 and the lower clad layer 2 are sputtering-etched while using the upper clad layer 4 as a mask by employing CCl4 gas. Si3N<5>4 is deposited, only laser stripe sections are bored, an Au-Zn electrode 6 is evaporated, and an Au-Sn electrode 7 is evaporated.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61501739-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015222811-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61150291-A
priorityDate 1983-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527288
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5943

Total number of triples: 18.