| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec9f1e0a8847c3bf8c1ea0ea1480f5b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe11b87491954b297b8eda14c86c80c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9ed8b18eafbd76b26c4b872403970cef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bfcd0bd72eb1421bc1dd94bc3c0caa76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69b9c31c0fff193ec963582b322ee349 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-113 |
| filingDate |
1983-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1a7a607880ae6b9437c69a8a2638e52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0544c855927681d4984950c376f422cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_481f9c424ce44074e6942c4a08ce5f34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08b375b6eaec1e462fbe7b5748fdbd1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1226ea8d2c4f6cab2529d6377cd0f0a5 |
| publicationDate |
1984-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S59195536-A |
| titleOfInvention |
Amorphous vanadium-silicon compound material and its manufacture |
| abstract |
PURPOSE: To obtain an amorphous V-Si compound material useful as a magnetic material, an ionic conductive material, a catalyst or the like by melting a mixture consisting of V 2 O 5 and SiO 2 in a specified ratio by heating and by cooling the melt very rapidly. n CONSTITUTION: V 2 O 5 is mixed with SiO 2 so as to provide a composition represented by a formula (V 2 O 5 ) 1-x .(SiO 2 ) x (where 1.00>x>0). The starting material mixture is put in a tube 7 having a melt spraying nozzle 11. The mixture is melted by heating to a temp. above the m.p., and the melt is very rapidly cooled by spraying from the nozzle 11 on the surface of a roll 13 rotating at high speed to obtain the desired amorphous V-Si compound material of high quality. An oriented polycrystalline thin film material is manufactured by heat-treating the compound material at a temp. below the crystallization temp. for a prescribed time. n COPYRIGHT: (C)1984,JPO&Japio |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109970101-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109970101-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10322942-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6450428-A |
| priorityDate |
1983-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |