http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59193451-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 1983-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f717ebf18a0a1e9c72f2b723c11ff22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5335037ecf78862f31b5bff5fe3c44aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79ebc0fef51bb7f36c0da5b147b3564e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a64f7525e0e61a09efb0e6ebaa0e6849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d1da17ee6981e80a9b1aff3c41d58eb |
| publicationDate | 1984-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S59193451-A |
| titleOfInvention | Pattern forming material and formation of pattern |
| abstract | PURPOSE:To obtain a pattern forming resist material having high sensitivity to high energy beams, high resolution and high dry etching resistance by forming a film contg. a specified siloxane polymer as the principal component on a substrate. CONSTITUTION:A cyclic phenylsiloxane such as hexaphenylcyclotrisiloxane is subjected to ring opening polymn. with potassium hydroxide or the like, and the resulting polydiphenylsiloxane is chloromethylated to prepare a siloxane polymer represented by the formula (where each of R, R' and R'' is H, alkyl or phenyl, and each of l, m and n is 0 or a positive integer). A film of the siloxane polymer is formed on a substrate and heat treated to obtain the desired pattern forming material. This pattern forming material is selectively exposed by irradiating high energy beams, and the unexposed parts of the film are removed with a developer. Thus, a pattern can be formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0215054-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6057833-A |
| priorityDate | 1983-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.