http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59148056-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 1983-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79ebc0fef51bb7f36c0da5b147b3564e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d1da17ee6981e80a9b1aff3c41d58eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a64f7525e0e61a09efb0e6ebaa0e6849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f717ebf18a0a1e9c72f2b723c11ff22 |
| publicationDate | 1984-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S59148056-A |
| titleOfInvention | Material sensitive to high energy beam and method for using it |
| abstract | PURPOSE:To obtain a material having high sensitivity and resolution to electron beams and near ultraviolet rays as well as superior dry etching resistance by using a specified high molecular compound contg. siloxane units. CONSTITUTION:Silicone resin having a principal chain structure contg. styrene type -C-C- bonds and siloxane units with high resistance to oxygen plasma in the side chain is used. The aromatic rings in the silicone resin have substituted chloromethyl groups showing high reactivity and resolution to high energy beams such as electron beams, X-rays and far ultraviolet rays. An org. polymer layer is formed on a substrate to be worked, and a thin film of said silicone resin is formed on the org. polymer layer. High energy beams are irradiated through a desired pattern, only the irradiated part is cross-linked, and the unirradiated part is removed by development. Using the remaining film as a mask the org. polymer layer is dry etched with gaseous oxygen. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62235943-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62135823-A |
| priorityDate | 1983-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.