http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S58225129-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2caffc98233a9e5db139c3bb8264c684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G85-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B65D81-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-52 |
| filingDate | 1982-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d64ac6927b9e1b94bb05e13f16868177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78d89cec2064d2206235fe5df93417cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_253b8b076c9367c3fbe3b68c29e46e68 |
| publicationDate | 1983-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S58225129-A |
| titleOfInvention | Antistatic housing |
| abstract | PURPOSE: To obtain titled housing suitable for semiconductor integrated circuit parts, etc., without impairing its own transparency, mechanical properties, etc., by forming a low-temperature plasma-polymerized film from a gaseous organic compound on the surface of a (semi)rigid polyvinyl chloride-based resin molded product. n CONSTITUTION: The surface whose area is at least contact area of any articles to be housed, of a molded product from a composition comprising (A) 100pts.wt. of a polyvinyl chloride-based resin and (B) ≤20pts.wt. of a plasticizer is treated with a low-temperature plasma of (C) a gaseous organic compound (preferably an N-contg. one such as methylamine) to form on the surface of a polymerized film of 0.01W2μ thick, thus obtaining the objective housing whose characteristics are as follows: (1) Static electrification voltage half-life of the film surface: ≤1sec (measured under the JIS L1094-A), (2) surface resistivity: ≤10 9 Ω (determined under the JIS K6911), (3) light transmittancy (at 555mμ) perpendicular to the film surface compared with that prior to the plasma treatment: ≥80%. n COPYRIGHT: (C)1983,JPO&Japio |
| priorityDate | 1982-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.