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filingDate 1982-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbb3e46230391982f2fea7b459be7d08
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publicationDate 1983-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S58219549-A
titleOfInvention Developing method of photoresist
abstract PURPOSE: To carry out development without causing swelling development by forming a latent image in a photoresist contg. poly(methyl isopropenyl ketone) and an azido comound and by developing the film with a specified developer. n CONSTITUTION: A photoresist soln. contg. poly(methyl isopropenyl ketone) and an azido compound represented by the formula (where X is H or Cl, and A is O, S, CH 2 , SO 2 or S 2 ) is applied to a substrate and prebaked to remove the contained solvent. The resulting photoresist film is exposed through a mask to form a latent image, and the film is developed with ≥1 kind of developer selected from ketone type org. solvents such as methyl ethyl ketone, nitroparaffin type org. solvents such as nitromethane, and polyhydric alcohol type org. solvents such as ethylene glycol monomethyl ether. n COPYRIGHT: (C)1983,JPO&Japio
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Total number of triples: 29.