http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5797228-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5fc7323ea2f6f8e3662c33bcef62d253 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-73 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-73 |
| filingDate | 1980-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db002ea63b4945f6af94d261e215d242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a40abedff809ffa02555a8328f1a23d4 |
| publicationDate | 1982-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5797228-A |
| titleOfInvention | Gate circuit for gate turn-off thyristor |
| abstract | PURPOSE:To prevent oscillation of a gate circuit, by decreasing the gain of a turn-off gate circuit, when a gate turn-off thyristor (GCT) turns off. CONSTITUTION:A transistor TR3 in Darlington connection is conductive with off-instruction and a voltage of an off-gate capacitor C2 is applied between a gate G and a cathode K of a GCT. When the junction between the G and K is restored, the voltage between the G and K is increased, a TR4 is conductive and the boltage between the G and K is clamped at a Zener voltage of a Zener diode ZD2. Until the Zener diode ZD2 breaks down, the gain of the TR4 is high and it is low after the break down, then no oscillation of the gate circuit is caused. |
| priorityDate | 1980-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID93460 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419573630 |
Total number of triples: 16.