http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5793549-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1980-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2904ad2eddaa65cac7e9c116ec584ba0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db4304bae54932d9840d2786772a2c95 |
| publicationDate | 1982-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5793549-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To shorten the manufacturing steps of a semiconductor device and to reduce the cost thereof by forming a pattern of an electrode wire readily without a photoresist film, thereby forming an IC or the like. CONSTITUTION:A PSG film 7 is formed on an Si substrate 6 formed with a source region 2 and a drain region 3, etc. a connecting hole 8 is opened, an aluminum layer 9 is deposited, a Cu layer 10 is deposted, and an SiO2 film 11 is further formed by a CVD method. Thereafter, when the film 11 is emitted in the prescribed pattern by a CO2 laser of 10mum of wavelength and 20-30W of power, the layers 9 and 10 are alloyed, and a specific pattern is formed. Then, it is plasma etched to remove the SiO2 film, the Cu layer is also dissolved with aqueous ammonia solution, with the layer 21 as a mask, the aluminum layer is removed with CCl4 gas, the alloy 21 of Cu and Al remains, and the wiring layer of the prescribed pattern (source and drain electrodes) can be formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62279677-A |
| priorityDate | 1980-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.