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filingDate 1980-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9efd414682a0d0d73c5c1a84e9390c1
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publicationDate 1982-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5730832-A
titleOfInvention Developing solution for use in positive type photoresist
abstract PURPOSE:To obtain a high quality image without adversely affecting integrated circuit elements in its manufacture, by using a mixture of a specified cyclic amine and water as a developing solution for a positive type photoresist derived from 1,2- quinonediazide. CONSTITUTION:A cyclic amine represented by the general formula shown R1, R2 being H or alkyl and m, n being >=2, such as 1, 8-diazabicyclo-(5,4,0)-7-undecene is preferable. A water-soluble monocyclic amine such as pyrrole or pyridine is also useful. A mixture of >=1 kinds of these amines and an ion-exchanged water is used as a developing solution for a positive type photoresist derived from 1,2-quinonediazide. This photoresist layer is formed on a silicon wafer, exposed, and developed with said developing solution, thus permitting integrated circuit elements superior in characteristics and resolution to be formed by absence of alkali metals and alcohol impairing its characteristics.
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