http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5727928-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-053
filingDate 1980-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_776e579350d0af32798d962e8370c1ef
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publicationDate 1982-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5727928-A
titleOfInvention Manufacture of thin titanium oxide film
abstract PURPOSE: To stably form a thin titanium oxide film on a molding as a substrate with high productivity by forming a thin titanium oxide film on the molding using alkyl titanate contg. alkali metal or alkali metallic ion. n CONSTITUTION: A thin titanium oxide film is formed on an org. or inorg. molding or an org. and inorg. composite molding as a substrate using alkyl titanate contg. monovalent alkali metal and/or alkali metallic ion by ≥0.5mol% per one atom titanium. The used alkyl titanate is represented by Ti l O m R n (where R is alkyl and each of l, m and n is an integer). Especially in case of m=4+(l-1)×3, n=4+(l-1)×2 and l=1W30, the alkyl titanate is preferably used from the viewpoint of high film formability and the characteristics of the resulting dielectric layer. The preferred alkyl titanate is tetrabutyl titanate or tetrapropyl titanate. n COPYRIGHT: (C)1982,JPO&Japio
priorityDate 1980-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.