http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5726430-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1980-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e3bd03858d207ae14643487c620faff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cd868c37b6f8ba25dfa21e68523f262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed456c66db7629480d7372a737ff3f63 |
| publicationDate | 1982-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5726430-A |
| titleOfInvention | Forming method for electrode and wiring layer of semiconductor device |
| abstract | PURPOSE:To obtain aluminum electrode and wire of microminiature pattern by coating a mask of high molecular material via a layer of Mo or the like readily forming chloride on an aluminum layer and sequentially etching it with gas plasma including Cl2. CONSTITUTION:An aluminum layer 4 is formed on an SiO2 film 3 exposed at the active layer 2 of a substrate 1. Then, an Mo layer 5 and a resist mask 6 are formed. When it is etched with gas plasma of CCl4:Ar=3:7, the chlorides of Mo and Al are sequentially formed, and no alumina is formed on the aluminum surface. Thus, microminiature electrode and wire patterns can be formed. Cr, Ti, etc. readily forming chloride can be used in addition to the Mo. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5934647-A |
| priorityDate | 1980-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.