http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S572549-A

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filingDate 1980-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a670f6273ad14ba5e4c0bf0d5a53bfb
publicationDate 1982-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S572549-A
titleOfInvention Semiconductor device and manufacture thereof
abstract PURPOSE:To alleviate the mechanical stress of a bump and to reduce the number of working steps by selectively forming a nitrided film on a bonding pad forming part as a bump station and forming a bonding projection and peripheral stepwise recess structure. CONSTITUTION:A plasma nitrided film 1 is selectively formed on a semiconductor substrate. Then, an aluminum is covered on the overall surface, the nitrided film becoming a stepwise bump station and the aluminum around the station are removed, and an aluminum wiring part 4 remains. Then, a Ti-Pt is covered on the nitrided film and its periphery, a gold plating layer 4 is formed, and a bump 6 is bonded. Thus, the bump station is formed in a stepwise structure, a stress can be alleviated, and the number of steps can be reduced.
priorityDate 1980-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 21.