http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57209852-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-33 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-27 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 |
| filingDate | 1981-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a4e5c8e42c680c8ddfc4ef70fca9d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c4b7107c40ec424a6b284ac723eb485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56a8ca5de9da34cb333edfdf17f3e23c |
| publicationDate | 1982-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S57209852-A |
| titleOfInvention | Method for forming transparent electrode pattern |
| abstract | PURPOSE: To form a patterned transparent electrode for liquid crystal display, etc., easily, even from a thick tin layer, by applying a tin film containing antimony to a glass plate, etching the tin film to a desired pattern, and oxidizing in oxygen plasma. n CONSTITUTION: A tin film 5 containing a small amount of antimony is applied to a glass insulation substrate 1 by vacuum deposition or sputtering, and desired patterning is carried out using a photo resist 3. The substrate is immersed in an etching liquid to effect the etching of the tin film 5, and the unnecessary photo resist 3 is removed. The tin film 5 formed to a desired electrode pattern is oxidized with oxygen plasma by placing the substrate 1 at the cathode side, and the tin oxide film 2 is formed on the substrate. The process enables the formation of a thick tin oxide transparent electrode pattern having low elecrical resistance and a thickness of about 1,000W2,000Å. n COPYRIGHT: (C)1982,JPO&Japio |
| priorityDate | 1981-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.