http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57192047-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 |
| filingDate | 1981-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84d65ac25583e0f63557e2f0d32425ed |
| publicationDate | 1982-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S57192047-A |
| titleOfInvention | Wiring layer in semiconductor device and manufacture thereof |
| abstract | PURPOSE:To obtain ohmic contact in both P type and N type regions and to avoid the formation of an unnecessary diode by forming the wiring layer in the semiconductor device by metal silicide. CONSTITUTION:A platinum layer 8 is formed on the entire surface after plasma ethcing. The thickness of the layer is made thicker than the thickness of a polysilicon layer 7. The reason why is that the platinum silicide layer must reach the P type region 2 and the N type region 3 in holes 5 and 6 so as to form the ohmic contact at the next step when the platinum and the polysilicon are reacted to form the platinum silicide by heat treatment. By this heat treatment, the polysilicon layer 7 and the platinum 8 are reacted, but the part other than the layer 7 is left as the platinum. Then the platinum is removed in aqua regia, the unreacted platinum layer is removed, and only the platinum silicide layer remains. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07221096-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62120354-U |
| priorityDate | 1981-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.