http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57167674-A

Outgoing Links

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filingDate 1981-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24e3d6ed052fb1f82411fdb610a2bd43
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publicationDate 1982-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S57167674-A
titleOfInvention Manufacture of semiconductor device
abstract PURPOSE:To easily control the lifetime of the subject semiconductor device by a method wherein a lifetime killer is formed at the prescribed position on a semiconductor substrate by irradiating an electron beam from above the mask consisting of Pb metal. CONSTITUTION:The Pb metal 4 is coated on the insulating film 3 on the semiconductor substrate 2 by performing evaporation or sputtering. Then, the metal 4 on a base 1, i.e., the prescribed position, is removed by performing a wet-etching, represented by aqua regia and the like, or a dry-etching wherein the gas of carbon tetrachloride and the like is used. Then, an electron beam is irradiated from above the mask, consisting of Pd metal 4, using a Van dd Graff type electrostatic accelerator, and a lifetime killer is formed on the base 1.
priorityDate 1981-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.