Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
filingDate |
1981-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb2c0b6a8b818916cb055419ec3967d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfd49b49b2144c6bb810e2b78ac6dc41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d4f9e19aceaa45ace9a21e3f4a96bdd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fe631bc867a3079eb2bfbf346aaeeaa |
publicationDate |
1982-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-S57141642-A |
titleOfInvention |
Formation of pattern |
abstract |
PURPOSE:To easily dry etch a layer to be worked by using a resist material prepared by adding a specified polysilsesquioxane to a resist for ultraviolet rays. CONSTITUTION:A substrate 1 having a formed layer 2 of SiO2 or the like to be worked is successively coated with the 1st resist layer 3 of polystyrene or the like with high etching resistance and the 2nd resist layer 4 consisting of a polysilsesquioxane represented by the formula (where n is the degree of polymn; R1 is H, 1-4C alkyl, phenyl or CN; R2 is phenyl, 1-4C alkyl or CN) and a resist for ultraviolet rays. The layer 4 alone is exposed and developed, and the disclosed part of the layer 3 is removed by etching in oxygen plasma to form a pattern. The disclosed part of the layer 2 is then removed by etching with an etchant to pattern the layer 2. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0163538-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8992806-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-8605284-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4863833-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5965430-A |
priorityDate |
1981-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |