http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57141642-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
filingDate 1981-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb2c0b6a8b818916cb055419ec3967d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfd49b49b2144c6bb810e2b78ac6dc41
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fe631bc867a3079eb2bfbf346aaeeaa
publicationDate 1982-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S57141642-A
titleOfInvention Formation of pattern
abstract PURPOSE:To easily dry etch a layer to be worked by using a resist material prepared by adding a specified polysilsesquioxane to a resist for ultraviolet rays. CONSTITUTION:A substrate 1 having a formed layer 2 of SiO2 or the like to be worked is successively coated with the 1st resist layer 3 of polystyrene or the like with high etching resistance and the 2nd resist layer 4 consisting of a polysilsesquioxane represented by the formula (where n is the degree of polymn; R1 is H, 1-4C alkyl, phenyl or CN; R2 is phenyl, 1-4C alkyl or CN) and a resist for ultraviolet rays. The layer 4 alone is exposed and developed, and the disclosed part of the layer 3 is removed by etching in oxygen plasma to form a pattern. The disclosed part of the layer 2 is then removed by etching with an etchant to pattern the layer 2.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0163538-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8992806-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4863833-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5965430-A
priorityDate 1981-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 26.