http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57130446-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 |
| filingDate | 1981-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b734d51941c217158caf08c18117a32a |
| publicationDate | 1982-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S57130446-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To make the breadth of isolation region of a semiconductor device to be formed narrowly when grooves are to be dug in an epitaxial layer for formation of the isolation region by a method wherein isotropic and anisotropic etchings are compoundedly used, extension in the lateral direction of the grooves is made to be generated only at the time of isotropic etching, and extension is suppressed to small. CONSTITUTION:N<+> type buried regions 22 of plural number are formed selectively by diffusion in a P type Si substrate 21, an N type layer 23 is made to grow vapor phase epitaxially on the whole surface containing the buried regions, and an SiO2 layer 24 and an Si3N4 layer 23 are adhered being laminated on the whole surface. Then a photo resist film 26 is provided thereon, openings 27 are dug corresponding to the intervals between the regions 22, and isotropic plasma etching is performed making the film 26 as the mask and using CF4 gas or mixed gas of CF4 and O2 to form the grooves 28 to enter into the layers 24, 25, and moreover to enter into the layer 23. After then, anisotropic reactive ion etching is performed making the same film 26 as the mask and using mixed gas of CCl3F and O2 to form grooves 31 to enter into by about 1/2 of thickness of the layer 23 only at the bottom face of the grooves 28. Accordingly under cut is made to small, and the parts thereof are buried with SiO2 layers. |
| priorityDate | 1981-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.