http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S571224-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3de607e369a55daf2120ea4267a4827 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-86 |
| filingDate | 1980-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c16b0dddacdb79c23da7c436676383cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8d424aab00c40785a015f7bd6cf4eb7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c563625fa8310af00697899aba36512 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_832a1541c3178ff9541f842889599c5b |
| publicationDate | 1982-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S571224-A |
| titleOfInvention | Monolithic semiconductor device |
| abstract | PURPOSE:To have a silicon device and a compound semiconductor device formed in one body by a method wherein a unipolar semiconductor and a compound semiconductor are provided on the same substrate and a part of the crystalline semiconductor film of either of the semiconductor is formed on the cyclic irregular surface, to be used for graph-epitaxial, consisting of an insulating material. CONSTITUTION:The cyclic irregular face 2, to be used for grapho-epitaxial, is formed on the semi-insulating GaAs substrate 1 by performing a selective etching and a part of which is formed into an insulated film 8 by performing an anodic oxidation. Then, on a part of the surface, an undoped GaAl layer 4, a P type GaAlAs layer 5, a P type GaAs layer 6 are grown by laminating, an upper electrode 7 to be used as a laser section is coated on the end section of the above layers and on the other end of the surface which is contacting the electrode 7, an Si layer 9 is grown, covered by a thick SiO2 film 10, its center part is formed with a thin SiO2 film 10', an electrode 11 is covered on the film 10' and this section is used as an FET. Through these procedures, a laser oscillation control is performed by the FET and the device can be formed in one body. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S58140113-A |
| priorityDate | 1980-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 29.