http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5680028-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1374dd16777534b65ad4422333245af8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-15 |
| filingDate | 1979-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a866a1bdc85a2b341ad4fb9ced8cdb86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d863d0ef45f7697f2305932895e7ea9 |
| publicationDate | 1981-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5680028-A |
| titleOfInvention | Production of flexible solid-state electro-coloring element |
| abstract | PURPOSE: To eliminate the peeling etc. of a solid-state proton conductive layer of a flexible solid-state electro-coloring (EC) element and make possible its low voltage driving by forming said conductive layer on an EC layer through vacuum deposition in a specific steam atmosphere with SiO as a vapor source. n CONSTITUTION: In a method of producing said element by laminating trasparent electrode D, E, C layers (WO 3 layer etc.) B, a solid-state proton conductive layer C, a transparent electrode D', and if necessary, a reflection reducing layer E, in this order on a flexible substrate (polyester film etc.) through vacuum deposition, the vacuum vessel provided therein with SiO as a vapor source is evacuated to ≤10 -5 torr, after which water vapor is admitted into the vessel and vapor deposition is performed in a water vapor atmosphere of about 10 -4 W10 -2 torr, to form the C layer to ≥150Å thickness, preferably, 1,000W5,000Å thicknesses, at the time of providing the layer C on the electrode D of Au etc. Under these conditions, the nonstoichiometric oxide of Si x O y (2>y/x>1.5) is formed, and the proton conductivity of the order of 10 4 W10 5 Ω.cm in specific resistance is obtd. In this way, the element which is colored and decolored at around W2V and is low in power consumption and is good in durability is obtainable. n COPYRIGHT: (C)1981,JPO&Japio |
| priorityDate | 1979-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635 |
Total number of triples: 18.