http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5672444-A

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50
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filingDate 1979-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd75cf890194a92ec9f7cccea4b98ef6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32d95547d14f9b18794550cefdcb4586
publicationDate 1981-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5672444-A
titleOfInvention Production of photomask
abstract PURPOSE:To obtain a metal mask of high accuracy by forming a high polymer film epoxy groups on a metal mask substrate, forming required resist layers by means of a photosensitive resin film on said film and selectively removing the exposed high polymer film then the metal layer with said images as a mask. CONSTITUTION:A high polymer film 7 having epoxy groups such as a copolymer of glycidyl methacrylate and ethyl acrylate is formed on the metal layer 2 on a transparent substrate 1. Required resist images 3 are formed by using a photosensitive resin on the film 7 in conventional method, after which with the images 3 as a maks, the film 7 is plasma-treated to remove the film 7 of the exposed parts. Next, with the film 7 and the layer 3 as a mask, the metal layer 2 is selectively removed with an etching soln., and the exposed layer 2 is removed, thence the layer 3 and film 7 are removed. This yields the mask for extra LSIs etc. of decreased side etching rates of the metal patterns 2 and high accuracy, durability and resolution.
priorityDate 1979-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 22.