http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S56149034-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0044 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-705 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 1980-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05132447c2bb74c1219ea9d939095067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_190f39b6098760ceb16ae54c6679f1c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01a80207cee89ed076c2cde04f4d2ef1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ebe2b40dd04255789822982948e8106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_424dc38f5619ec4d6501b7ae0332542b |
| publicationDate | 1981-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S56149034-A |
| titleOfInvention | Inorganic resist material |
| abstract | PURPOSE:To facilitate the development and enhance the quality of a pattern by laying a middle layer made of amorphous Si, amorphous Ge or Te or composed of two or more among them on an amorphous chalcogenide layer and further laying a silver or silver-contg. layer on the middle layer. CONSTITUTION:Amorphous Se-base chalcogenide layer 2a is laid on substrate or material 1 on which a pattern is formed, and middle layer 2b made of amorphous Si, amorphous Ge or Te or composed of two or more among them is laid on layer 2a. On layer 2b silver or silver-contg. layer 2c is further laid to form inorg. resist material 2. Se-Ge, Se-S-Ge or the like is used as a substance forming layer 2a. Hydrogen-contg. amorphous Se and hydrogen-contg. amorphous Ge are especially suitable for use as the amorphous Si and the amorphous Ge for layer 2b, respectively. AgBr, AgCl, AgI, AgS or the like is suitable for use as a substance forming layer 2c. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004504633-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013167886-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009041916-A1 |
| priorityDate | 1980-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.