http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S56147483-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1980-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a4ed49a5477ea91f30293c20917704b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ab9ffd44c76831f7ab0835556544958 |
| publicationDate | 1981-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S56147483-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To prevent abnormal leak and alloy spikes in a P-N junction between a diffused layer and substrate by enclosing roughness on the part of the substrate surface, to which an electrode is directly contacted, in a deep diffused region. CONSTITUTION:A field oxide film 2 is formed on a P type Si substrate. A hole is perforated in a gate oxide film 3, and P added poly Si patterns 6 and 6' are formed with a resistmask 5. Etching is performed by CCl4 gas plasma, and roughness 7 is formed on the substrate surface. Then, PSG 8 is applied, heat treatment is performed at a high temperature, a deep N layer 9 is formed, the roughness 7 is enclosed, and an N layer 10 is formed at the same time. The PSG is etched out, As ions are implanted, heat treatment is performed, and an N type source and drain 11 are formed. Finally, PSG is applied, and the electrode is attached. In this constitution, abnormal leak is not generated in the junction between the N layer 9 and the substrate 1, and also the alloy spikes are not generated therein. |
| priorityDate | 1980-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.