http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5588371-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
filingDate 1978-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6fb73cd5bba3c24a5528d72c28edf60
publicationDate 1980-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5588371-A
titleOfInvention Preparation of schottky barrier diode using gallium arsenide
abstract PURPOSE: To stabilize the state of a boundary face between a substrate and a protecting film and prevent the drop of reverse withstanding voltage by growing a surface protecting film whose main component is arsenic or gallium on a gallium arsenide substrate on which electrodes are formed. n CONSTITUTION: After forming an epitaxial layer 11 on a gallium arsenide substrate 10, etching grooves 12 are cut to form a mesa part 13, and further, in the etching grooves 12 and on the top of the mesa part, ohmic electrodes 15 and a Schottky electrode 14 are formed respectively, Next, a surface protecting film 16 whose main component is arsenic oxides is formed on the substrate 10 by the methods of plasma oxidation, thermal oxidation in hydrogen peroxide solution, etc. The surface protecting film 16 may be that whose main component is gallium oxides formed by anodic oxidation method. Then coating polyimide resin 17 and forming contact electrodes 18, the substrate 10 is formed into a prescribed form by etching. n COPYRIGHT: (C)1980,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0538682-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5317190-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07146910-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103245612-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0538682-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06176211-A
priorityDate 1978-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359596
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557771
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14770
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457765275
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419586572
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID784
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5360835
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559310

Total number of triples: 26.