http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5570045-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1978-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a72ebb25528faff6db607a775edca68 |
| publicationDate | 1980-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5570045-A |
| titleOfInvention | Method of preventing pollution of surface of semiconductor device |
| abstract | PURPOSE: To prevent adherence of cutting chips of a semiconductor substrate at dicing time by forming polyimide resin film on the surface of the substrate before dicing process and forming hydrazine hydrate aluminum compound on the aluminum surface exposed by a selective etching process. n CONSTITUTION: An SiO 2 film 2, an Si 3 M 4 film 3, a CVD.PSG film 4, a CVD.SiO 2 film 5, etc. are laminated on a silicon semiconductor 1, aluminum wires 6 are formed thereon, a polyimide resin (PIQ) film 10 is formed as a passivation film thereon and a dicing process is then executed. Thus, hydrazine hydrate of PIQ etching liquid and a thin film 11 of aluminum compound are formed on the surface of an aluminum substrate 6 to thereby reduce the adherence of cutting chips 12 at dicing time and to simply remove them via shower or blade coolant. Thus, it can prevent improper bonding of aluminum bonding pad. n COPYRIGHT: (C)1980,JPO&Japio |
| priorityDate | 1978-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.