http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5456763-A

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filingDate 1977-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6212d92a144ddc11b6f3b7916055915c
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publicationDate 1979-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5456763-A
titleOfInvention Resistivity measuring method for semiconductor silicon single-crystal
abstract PURPOSE: To secure the steady measurement of the resistivity by processing the surface of the Si single-crystal in the oxidizable water solution or the oxidizable atmosphere in a short time less than one hour. n CONSTITUTION: About 1-hour process is given in the water solution of the demineralized water, nitric acid, sulfuric acid plus water, sodiumdichromate, H 2 O 2 , etc. to the Si single-crystal, epitaxial layer and the like which are polished or etched in a chemical or mechanical way. The normal temperature is given to the sodium dichromate water solution, and the boiling treatment is given to other cases. Also, the vapor or ozone produced through boiling of the water solution of nitric acid, H 2 O 2 , etc. can be used, In this way, the resistivity change is extremely stabilized, and no change is recognized for the sheet resistance even if the single-crystal and others may be left in a room about the days n COPYRIGHT: (C)1979,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101806837-A
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