http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1197394-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1998-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f069478ac34356254c0744eab5eda08
publicationDate 1999-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1197394-A
titleOfInvention Direct write patterning method
abstract A method of forming a via in an integrated circuit device without using photolithography technology is provided. In the process of manufacturing an integrated circuit device (10), a dielectric layer (16) is provided. Is formed using a material that can be removed in an accurate and reliable manner by exposure to an energy beam (20), such as an excimer laser or an e-beam.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011023760-A
priorityDate 1997-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.